Field effect transistor device with channel fin structure and method of fabricating the same

摘要

A finFET device includes a semiconductor substrate having specific regions surrounded with a trench. The trench is filled with an insulating layer, and recess holes are formed within the specific regions such that channel fins are formed by raised portions of the semiconductor substrate on both sides of the recess holes. Gate lines are formed to overlie and extend across the channel fins. Source/drain regions are formed at both ends of the channel fins and connected by the channel fins. Other embodiments are described and claimed.