BONDING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS USING THE SAME, AND SEMICONDUCTOR APPARATUS

摘要

PROBLEM TO BE SOLVED: To exclude the oxide films formed on the surfaces of metal materials when bonding the metal materials to each other, without using such a large-sized equipment as a reduction furnace in the ultrasonic bonding of metals. SOLUTION: Micro-grains 4 are so interposed between the bonding surfaces of two metal members (1, 2), and ultrasonic vibrations are so applied to at least one of the metal members as to bond the metal members to each other. As the micro-grains, there are used the ones whose grain sizes are not smaller than the larger thickness of the thicknesses of the natural oxide films formed on the bonding surfaces of the two metal members. COPYRIGHT: (C)2005,JPO&NCIPI