| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated circuit device, provided with a temperature sensor for obtaining satisfactory SNR, and to provide a manufacturing method of the same. SOLUTION: In the temperature sensor 3 for the semiconductor integrated circuit device 1, wires W12 are formed in a wiring layer L3 of the top layer of a multilayer wiring layer M1. Then, between the two wires W12, a sheet-like temperature monitoring member 10, consisting of vanadium oxide, is provided so as to cover the two wires W12. Thus, the temperature-monitoring member 10 is connected between two wires W11 via vias V11 and the wirings W12. COPYRIGHT: (C)2005,JPO&NCIPI
|
