发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes: a semiconductor substrate; a first semiconductor region formed in the reverse surface region of the semiconductor substrate and including a first conductivity type impurity; a second semiconductor region formed on the first semiconductor region in the semiconductor substrate and including a second conductivity type impurity; a third semiconductor region formed on the second semiconductor region in the semiconductor substrate and including a first conductivity type impurity; a trench passing through the second and third semiconductor regions and reaching the first semiconductor region; and a gate insulating film formed along the wall face of the trench; a gate electrode formed on the gate insulating film in the trench. Further, a pocket region including a second conductivity type impurity of which peak concentration is higher than that of the second semiconductor region is formed by a side of the trench between the second semiconductor region and the third semiconductor region.
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申请公布号 |
US2005179082(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050030945 |
申请日期 |
2005.01.10 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MIYATA SATOE;MIZOKUCHI SHUJI |
分类号 |
H01L29/78;H01L21/265;H01L21/331;H01L21/336;H01L29/10;H01L29/43;H01L29/45;H01L29/739;(IPC1-7):H01L29/43 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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