| 摘要 |
<p>The present invention relates to a cascode radio frequency power amplifier, comprising at least two cascaded MOS transistors (T1, T2, Tn) formed in a mutual substrate, where the bulk nodes (B1, B2, Bn) of the transistors (T1, T2, Tn) are isolated from each other and connected to the respective source (S1, S2, Sn) of each transistor. The present invention also teaches that the drain (Dn) of the topmost transistor (Tn) is connected to the power supply (vdd) through an inductive load (Ld), and that the gate (G2, Gn) of each upper transistor (T2, Tn) is equipped with a self-biasing circuit (SB2, SBn) connected at least between the drain (D2, Dn) and the gate (G2, Gn) of respective upper transistor (T2, Tn).</p> |
