SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE USING SAME

摘要

Disclosed is a low-resistance p-type ZnS semiconductor material which easily forms an ohmic contact with a metal material. Also disclosed are a semiconductor device and semiconductor light-emitting device having a low-resistance electrode on a substrate such as a glass substrate which is other than a single crystal substrate. Specifically disclosed is a semiconductor material to be used as a hole injection electrode layer of a light-emitting device, which semiconductor material is transparent to light in the visible region and has a composition represented by the formula: Zn(1-alpha-beta-gamma)CualphaMgbetaCdgammaS(1-x-y)SexTey (0.004 <= alpha <= 0.4, beta <= 0.2, gamma <= 0.2, 0 <= x <= 1, 0 <= y <= 0.2, x + y <= 1).