THIN FILM, METHOD FOR MANUFACTURING P-TYPE ZINC OXIDE THIN FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film which materializes a high crystallinity and a surface flatness, and dopes a dopant at a high density.

SOLUTION: This method comprises: the low temperature high doped layer growing step of doping the dopant while growing a thin film at a specific first temperature; the annealing step of discontinuing the growth of the thin film to anneal the thin film at a predetermined second temperature higher than the first temperature; and the high temperature low doped layer growing step of growing the thin film at the second temperature.

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