| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enhance the on/off ratio of a semiconductor device having an organic semiconductor layer by suppressing a drain off current. <P>SOLUTION: The semiconductor device 10 comprises an insulating substrate 11, a gate electrode 12 and a gate insulating film 13 formed sequentially on the insulating substrate 11, two source-drain electrodes 14 arranged on the gate insulating film 13 while spaced apart by a predetermined distance, a semiconductor layer 15 covering the surface of the gate insulating film 13 and filling the gap of the source-drain electrodes 14, and an insulating film 16 covering the source-drain electrodes 14 and the surface of the semiconductor layer 15 wherein the insulating film 16 touches the surface of the source-drain electrodes 14. A drain off current is prevented from flowing from the insulating film 16 side surface of one source-drain electrode 14 to the other source-drain electrode 14 through the semiconductor layer 15. The two source-drain electrodes are sandwiched by the insulating substrate and the gate insulating film even in an inverse stagger structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
