发明名称 |
PROCESS FOR FABRICATING THIN FILM TRANSISTOR, PROCESS FOR FABRICATING DISPLAY, AND DISPLAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a thin film transistor depositing fine and homogeneous film regardless of the size of a substrate while satisfying both cost reduction and high performance, and also to provide a process for fabricating a high performance display advantageous in the cost regardless of the size of a screen. SOLUTION: The process for fabricating the thin film transistor comprises steps of: coating the predetermined region on a substrate for forming the thin film transistor with liquid silicon material; and patterning the liquid silicon material thus applied into a desired pattern. The process for fabricating the display employs the process for fabricating the thin film transistor. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005223268(A) |
申请公布日期 |
2005.08.18 |
申请号 |
JP20040032262 |
申请日期 |
2004.02.09 |
申请人 |
SEIKO EPSON CORP |
发明人 |
AOKI TAKASHI |
分类号 |
G02F1/1368;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/336;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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