发明名称 PROCESS FOR FABRICATING THIN FILM TRANSISTOR, PROCESS FOR FABRICATING DISPLAY, AND DISPLAY
摘要 PROBLEM TO BE SOLVED: To provide a process for fabricating a thin film transistor depositing fine and homogeneous film regardless of the size of a substrate while satisfying both cost reduction and high performance, and also to provide a process for fabricating a high performance display advantageous in the cost regardless of the size of a screen. SOLUTION: The process for fabricating the thin film transistor comprises steps of: coating the predetermined region on a substrate for forming the thin film transistor with liquid silicon material; and patterning the liquid silicon material thus applied into a desired pattern. The process for fabricating the display employs the process for fabricating the thin film transistor. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005223268(A) 申请公布日期 2005.08.18
申请号 JP20040032262 申请日期 2004.02.09
申请人 SEIKO EPSON CORP 发明人 AOKI TAKASHI
分类号 G02F1/1368;H01L21/00;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/336;G02F1/136 主分类号 G02F1/1368
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