发明名称 BIAS CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a bias circuit capable of suitably carrying out both threshold voltage dispersion compensation and temperature fluctuation compensation. SOLUTION: The bias circuit for applying a voltage to a control terminal 106 of a first active element 104 for amplifying an RF signal includes: first and second temperature compensation circuits; and a threshold voltage dispersion compensation circuit. The first temperature compensation circuit is provided with at least one diode 118 or more. The threshold voltage dispersion compensation circuit comprises the interconnection between a second active element 113 and a resistor 111. The second temperature compensation circuit comprises at least one diode 117 or more and applies temperature compensation to a voltage applied from the threshold voltage dispersion compensation circuit to the control terminal 106 via the first temperature compensation circuit. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005223437(A) 申请公布日期 2005.08.18
申请号 JP20040027043 申请日期 2004.02.03
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES LTD 发明人 KOKUBO MASAYUKI
分类号 H03F1/30;H03F3/04;H03F3/189;H03F3/19;H03F3/195;(IPC1-7):H03F1/30 主分类号 H03F1/30
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