| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology to reduce the on-state resistance of a power MISFET, while suppressing the occurrence of defects in strained silicon layer. SOLUTION: A strained silicon layer 35 is formed only on the drain region of a distorted silicon layer 23 by epitaxial growth method. Most of a lightly-doped n-type dopant diffusion region 32, which constitutes the drain region, offset region 38, and heavily-doped n-type dopant diffusion region 40, is formed inside the strained silicon layers 23 and 35, wherein the electron mobility is higher than that in normal silicon layers. COPYRIGHT: (C)2005,JPO&NCIPI
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