| 摘要 |
A method of manufacturing a ferroelectric capacitor is provided capable of reducing manufacturing damages. In the method of manufacturing a ferroelectric capacitor, by sequentially depositing a lower electrode, a ferroelectric film, and an upper electrode on a substrate, dielectric films are formed, and then an ion beam is irradiated onto predetermined regions of the dielectric films, or ions of a predetermined element are injected onto the regions. Then, the regions where the ion beam is irradiated or the ions are injected onto are transformed into conductors, and thus it is possible to form the lower electrode and/or the upper electrode without etching.
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