| 摘要 |
The invention relates to a mask for use in a microlithographic projection exposure system (10), comprising a support (40), to which a pattern of opaque structures (44) is applied. To reduce the dependence of the transmission capability on the polarisation, the structures (44) contain a material with a refractive index, whose imaginary part is greater than 1.8 and preferably greater than 2.2. Silicon, for example, can constitute a material of this type. Alternatively, or in addition, a dielectric material (54) can be provided in a gap (48) between two structures (442), whereby said material does not come into contact with the structures (44). The dependence of the absorption capability on the polarisation is also reduced by the dielectric coating (60) of the structures (44). |
