| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain the reduction of film deposition cost and the improvement of film deposition efficiency in an Si oxide film or the like suitable for an optical thin film at the time of film-depositing the Si oxide film or the like by sputtering. <P>SOLUTION: The sputtering target is composed substantially of at least one kind of element selected from Si, Ta, Nb, Zr, Hf, Mg, Ca, Y and Al, and has a relative density in the range of 60 to 98%. Further, in the sputtering target composed substantially of Si, the content of oxygen is controlled to the range of 0.01 to 1 mass%, and Vickers hardness is controlled to the range of 300 to 800 Hv as well. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
