| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make a system constructed in a small scale when one system is constituted of a plurality of semiconductor device. <P>SOLUTION: The device is highly integrated by laminating 3 units of semiconductor devices C, F and G on a substrate H. An adhesive b between the semiconductor device C of a first layer and the semiconductor F of a second layer is different in material from an adhesive c between the semiconductor device F of the second layer and the semiconductor device G of a third layer. When the semiconductor device F of the second layer is analyzed, only the adhesive c is removed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
