SEMICONDUCTOR LASER DEVICE, APPLICATION SYSTEM, CRYSTAL GROWTH METHOD, AND COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser wherein optical confinement in an active layer is sufficiently large. SOLUTION: The semiconductor laser device 100 includes a first layer 107 consisting of a group III-V compound semiconductor layer which contains at least one kind of group-V element other than nitrogen and nitrogen as a group-V composition. A second layer 106 consisting of a group III-V compound semiconductor layer expressed by a composition formula GaAs1-h-kSbhNk(0