发明名称 Semiconductor memory device
摘要 To a bit line to which a memory cell having a ferroelectric capacitor is connected, a guarantee cell having a ferroelectric capacitor is connected. During a read operation of data from the memory cell, data is read out from the memory cell, and the data read out from the memory cell by destructive reading is written automatically to the guarantee cell, so that the data is retained securely as nonvolatile binary data regardless of operating condition, and thus loss of data can be suppressed.
申请公布号 US2005180222(A1) 申请公布日期 2005.08.18
申请号 US20050079314 申请日期 2005.03.15
申请人 FUJITSU LIMITED 发明人 SUZUKI HIDEAKI
分类号 G11C11/22;(IPC1-7):G11C5/00 主分类号 G11C11/22
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