| 发明名称 |
Semiconductor device with low resistive path barrier |
| 摘要 |
A semiconductor device formed on a conductivity region and isolated by a low resistive path barrier and a deep trench isolation structure.
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| 申请公布号 |
US2005179111(A1) |
申请公布日期 |
2005.08.18 |
| 申请号 |
US20040779379 |
申请日期 |
2004.02.12 |
| 申请人 |
CHAO IWEN |
发明人 |
CHAO IWEN |
| 分类号 |
H01L21/74;H01L21/761;H01L21/765;H01L21/8238;H01L27/092;(IPC1-7):H01L29/00;H01L21/823 |
主分类号 |
H01L21/74 |
| 代理机构 |
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