| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a thick silicide is formed in a gate electrode, and properly thin silicides is suitably formed in a source part and a drain part. SOLUTION: Before the silicides are formed in the source and the drain on the gate electrode, the silicide impediment film of a thin film is formed on a semiconductor substrate. Then, only the silicide impediment film of the upper part of the gate electrode incorporated in the gate is removed. Then, a cobalt film is formed, and heat treated. Then, the thick cobalt silicide is formed in the upper part of the gate. On the other hand, the thin cobalt silicides are formed in the source and the drain. COPYRIGHT: (C)2005,JPO&NCIPI
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