| 摘要 |
The object of the present invention is provide a film forming method and a film forming apparatus for suppressing mixing of an organic type foreign material into a film forming chamber when forming a film, thereby reducing a defect density after a film formation. In order to achieve the object, the film forming apparatus comprises a load lock for placing a cassette for holding a wafer, a film forming chamber for forming a thin film on the wafer, and an arm for conveying the wafer from the load lock to the film forming chamber, wherein a mass spectrograph for measuring a partial pressure of an organic substance under an atmosphere in the load lock is placed in the load lock. In the film forming method, an atmosphere in the load lock in which a cassette holding the wafer is placed is firstly exhausted. In this exhaust, the exhaust is performed until a partial pressure of the organic substance under the atmosphere in the load lock reaches 7.5x10<SUP>-5 </SUP>mTorr or less. The wafer is conveyed to a film forming chamber for a desired thin film to be formed.
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