摘要 |
The present invention relates to methods of etching a porous dielectric. The method includes etching the film in a plasma etch chamber with CF<SUB>4</SUB>, H<SUB>2 </SUB>and a noble gas, wherein the CF<SUB>4 </SUB>to H<SUB>2 </SUB>gas flow ratio is between 1.33:1 and 2.7:1 and the noble gas is greater than about 42% of the total gas flow to the plasma chamber.
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