发明名称 Process for preparing low dielectric constant material
摘要 A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R<SUB>1 </SUB>to R<SUB>6 </SUB>is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R<SUB>1 </SUB>to R<SUB>6 </SUB>are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR<SUB>7</SUB>)(OR<SUB>8</SUB>)(OR<SUB>9</SUB>), and at least one of R<SUB>1 </SUB>to R<SUB>6 </SUB>is not a hydrogen atom.
申请公布号 US2005181628(A1) 申请公布日期 2005.08.18
申请号 US20050107800 申请日期 2005.04.18
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NOBUTOKI HIDEHARU;KUMADA TERUHIKO;TOYOSHIMA TOSHIYUKI;YASUDA NAOKI;NAGAE SUGURU
分类号 C08G79/08;H01L21/312;H01L21/314;H01L21/768;H01L23/522;H01L23/532;H01L29/51;(IPC1-7):H01L21/824 主分类号 C08G79/08
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