| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a single crystal by which a uniformly balanced (homogeneous) single crystal can be easily produced by a Bridgman method. SOLUTION: The method for producing the single crystal A by growing it by the Bridgman method has a filling process for filling a seed crystal 3 in the lower part of a crucible 5 and further sequentially filling a plurality of single crystal raw materials having different compositions in layers on the seed crystal 3, a melting process for arranging the crucible 5 in a vertical furnace 2 wherein a temperature gradient is formed in the vertical direction of the crucible 5, and heating and melting the single crystal raw materials into a melt 6, and a growing process for growing the single crystal A by progressively solidifying the melt 6 from a lower part toward an upper part. In the filling process, the filling is performed while changing single crystal raw materials, in each of which the ratio of an element, whose ratio decreases in comparison with the compositional ratio of an original melt in accordance with progression of growth, is enhanced, from a lower part toward an upper part in stages. COPYRIGHT: (C)2005,JPO&NCIPI
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