发明名称 |
Highly doped III-nitride semiconductors |
摘要 |
A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AIN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1x10<SUP>20 </SUP>cm<SUP>-3 </SUP>at Al mole fractions up to 65% are obtained.
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申请公布号 |
US2005179050(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050082070 |
申请日期 |
2005.03.16 |
申请人 |
CORNELL RESEARCH FOUNDATION, INC. |
发明人 |
SCHAFF WILLIAM J.;HWANG JEONGHYUN |
分类号 |
H01L21/203;H01L29/15;H01L29/20;H01L29/207;H01L29/778;H01L33/32;(IPC1-7):H01L29/22 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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