发明名称 Highly doped III-nitride semiconductors
摘要 A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by first removing contaminants from a MBE machine. Wafers are then outgassed in the machine at very low pressures. A nitride is then formed on the wafer and an AIN layer is grown. The highly doped GaAlN layer is then formed having electron densities beyond 1x10<SUP>20 </SUP>cm<SUP>-3 </SUP>at Al mole fractions up to 65% are obtained.
申请公布号 US2005179050(A1) 申请公布日期 2005.08.18
申请号 US20050082070 申请日期 2005.03.16
申请人 CORNELL RESEARCH FOUNDATION, INC. 发明人 SCHAFF WILLIAM J.;HWANG JEONGHYUN
分类号 H01L21/203;H01L29/15;H01L29/20;H01L29/207;H01L29/778;H01L33/32;(IPC1-7):H01L29/22 主分类号 H01L21/203
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