| 摘要 |
A method for the formation of copper wiring films includes the steps of forming a first copper film by a CVD method on a diffusion barrier film, which diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500° C.; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode. |
