| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which formation of a surface hardly-solubilized layer is prevented without reducing the thickness of a resist layer, a resist pattern shape and dimensional accuracy are improved, and throughput is not lowered, with respect to a pattern forming method using a chemically amplified resist. <P>SOLUTION: The pattern forming method includes steps 201 and 202 of forming a chemically amplified resist layer on a semiconductor substrate; a step 203 of patternwise exposing the chemically amplified resist layer; a step 204 of heating the chemically amplified resist layer after the exposure; a first developing step 205 in which alkali concentration is high; and a second developing step 206 in which alkali concentration is low. Particularly when an F<SB>2</SB>laser is used as an exposure light source, application to a pattern forming method for a chemically amplified resist containing a suitable fluorocarbon resin is effective to improve dimensional uniformity and a resist shape. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
