| 摘要 |
PROBLEM TO BE SOLVED: To realize a ferroelectric film capacitor having proper electrical characteristics by preventing nonunifomity in the composition of a ferroelectric film in the film thickness direction. SOLUTION: In a method for manufacturing a semiconductor device, the lower electrode is formed on a semiconductor substrate (S11), and then a first ferroelectric film is formed on the lower electrode by CVD method which uses a first source gas (S13a). Next, a second ferroelectric film is formed on the first ferroelectric film by CVD method, using a second source gas (S13b). Subsequently, the upper electrode is formed on the second ferroelectric film (S14). In this method, the concentration of bismuth, contained in the first source gas which is used in the step (S13a) of forming the first forroelectric film, is made different from the concentration of bismuth contained in the second source gas, which is used in the step (S13b) of forming the second ferroelectric film. COPYRIGHT: (C)2005,JPO&NCIPI
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