| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of introducing impurity, in which a process combining an amorphous making plasma irradiation with a plasma doping can be repeated in a simple process and in a high throughput state, without causing breaking down of a device. SOLUTION: When the amorphous making plasma irradiation and a plasma for use in the plasma doping are switched, discharging is stopped, and the initial state of the adjustable point of a high-frequency power source and a peripheral circuit is reset so as to adapt for the plasma to be used in each process. Alternatively, the load applied to the high-frequency power source at the time of switching is reduced, by raising a pressure or lowering a bias voltage. COPYRIGHT: (C)2005,JPO&NCIPI
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