| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein the effect of channel length modulation is reduced and the leak of drain output analog signals into the source is made small, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device has a MOS transistor 100 comprising a silicon substrate 1, a gate oxide film 15 provided on the silicon substrate 1, a gate electrode 13 provided on the gate oxide film 15, an n-type source and drain provided on the silicon substrate 1 exposed from under the gate electrode 13, and a p-type channel region positioned in between the source and the drain. The p-type channel region has a low-Vth region 29, provided at a specified location adjoining the drain and not adjoining the source, and the low-Vth region 29 contains more n-type impurities, such as phosphorus, than the other locations of the p-type channel region. COPYRIGHT: (C)2005,JPO&NCIPI
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