| 摘要 |
PROBLEM TO BE SOLVED: To optimize characteristics of both MOS transistors in a semiconductor device where the MOS transistor having a silicide layer on a semiconductor substrate and the MOS transistor which does not have the silicide layer are mix-loaded, and in a manufacturing method of the device. SOLUTION: The first MOS transistors Tr1 and Tr2 where the silicide layer 99 is formed, and the second MOS transistors Tr3 and Tr4 where the silicide layer is not formed, are formed on the semiconductor substrate 61. Depth Xj3 of source/drain regions 91 to 94 of the first MOS transistors Tr1 and Tr2 and the second MOS transistors Tr3 and Tr4 is set to be equal to depth Xj4 of source/drain regions 95 to 98. Silicide block layers 81 and 82 inhibiting silicide reaction are formed in the second field effect transistors Tr3 and Tr4. COPYRIGHT: (C)2005,JPO&NCIPI
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