发明名称 HEAT TREATMENT EQUIPMENT AND METHOD
摘要 PROBLEM TO BE SOLVED: To raise the temperature of a workpiece, e.g. a semiconductor wafer W, by performing temperature regulation of the workpiece in the radial direction, thereby suppressing occurrence of temperature distribution in the radial direction of the workpiece. SOLUTION: A heating unit for heating a wafer W is disposed opposite to a mounting section, provided rotatably in the horizontal direction in order to hold the wafer. The heating unit 5 comprises a double-ended arcuate lamp 6, having power supply sections at the opposite ends and heating the wafer W by irradiating the wafer W with light. The arcuate lamp 6 is arranged in the circumferential direction, to form a ring lamp, and a plurality of ring lamps of different size are arranged concentrically. With such a constitution, illuminance can be readily regulated in the radial direction, and temperature of the wafer W can be regulated in the radial direction. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005222962(A) 申请公布日期 2005.08.18
申请号 JP20000119325 申请日期 2000.04.20
申请人 TOKYO ELECTRON LTD 发明人 SHIGEOKA TAKASHI;SAKUMA TAKESHI
分类号 H01L21/31;H01L21/26;(IPC1-7):H01L21/26 主分类号 H01L21/31
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