| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface wave excitation plasma CVD apparatus in which a depositing enabling region having proper film thickness and film quality can be formed to the perimeter of a substrate S to be treated. <P>SOLUTION: The plasma CVD apparatus 100 includes an annular waveguide 3 which has an inlet and a terminating part which introduce a microwave and which make the bottom plate 3d with a slot antenna group 30 formed therein as an inside face, a dielectric tube 4 in which an outside face is arranged in contact with the bottom plate 3d of the annular waveguide 3, the dielectric tube 4 held to form an airtight space, a surface wave excitation plasma P generated in the airtight space, and a chamber 2 for depositing to the front surface of the substrate S by this plasma P. The material gas containing a silicon element is emitted in the chamber 2 from the gas injection port 63 of a top view side introducing pipe 6 and the gas port 73 of a side face side introducing pipe 7. A process gas which makes the material gas cause a chemical reaction, is emitted in the chamber 2 from the gas injection port 53 which is provided separately with the gas injection ports 63, 73. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
