发明名称 METHOD FOR PRODUCING BROMINE-ENRICHED THALLIUM BROMIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a bromine-enriched thallium bromide single crystal, the method by which the lattice defects in the single crystal can be reduced. SOLUTION: The method for producing the bromine-enriched thallium bromide single crystal includes a purification steps (step S5 to step S10) for purifying a raw material of thallous bromide, enriching steps (step S14 to step S17)for enriching bromine in the purified thallous bromide, and single crystal forming steps (step S18 to step S20) for forming a single crystal of thallous bromide containing trivalent thallium (e.g., TlBr<SB>3</SB>). Since bromine is added to thallous bromide in the enriching steps, the bromine-enriched thallous bromide almost free from the lattice defects can be produced. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005219941(A) 申请公布日期 2005.08.18
申请号 JP20040027090 申请日期 2004.02.03
申请人 HITACHI LTD;OHYO KOKEN KOGYO CO LTD 发明人 KITAGUCHI HIROSHI;AMAMIYA KENSUKE;YOKOI KAZUMA;UENO YUICHIRO;TSUCHIYA KAZUTOSHI;YANAGIDA NORIFUMI;KOJIMA SHINICHI;SHOJI TADAYOSHI;HITOMI KEITARO;MATSUMOTO GIICHI;MINAMI KAZUHIRO
分类号 C30B29/12;C30B11/00;(IPC1-7):C30B29/12 主分类号 C30B29/12
代理机构 代理人
主权项
地址