发明名称 Semiconductor device and method of manufacturing same
摘要 A semiconductor device having a first semiconductor element placed over a second semiconductor element, so that an edge of the first semiconductor element is not placed over a predetermined circuit in the second semiconductor element, and wherein a size of the first semiconductor element is smaller than a size of the second semiconductor element. The predetermined circuit has a characteristic that tends to change with stress greater than characteristics of other circuits on the second semiconductor element that are under the edge of the first semiconductor element.
申请公布号 US2005181539(A1) 申请公布日期 2005.08.18
申请号 US20050101420 申请日期 2005.04.08
申请人 OHIE MITSUYA 发明人 OHIE MITSUYA
分类号 H01L25/18;H01L23/495;H01L25/065;H01L25/07;(IPC1-7):H01L21/50 主分类号 H01L25/18
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