| 摘要 |
PROBLEM TO BE SOLVED: To increase the importance of a future microprocessor and a future computer system by decreasing power noise of intermediate frequency, by providing a semiconductor device structure for improving power noise property, and to provide a multilayer module having superior electrical characteristics accompanying reduction in the manufacturing cost, increase in wiring capability, and decrease in inductance. SOLUTION: A multilayer module comprises a top conductive layer L1 to which an electronic component is attached, a plurality of insulating layers 6, and a plurality of conductive layers L2-L8 arranged between the insulating layers. As for the conductive layers L1-L4 near the front surface of the module, two of at least three layers, a potential layer and/or a ground layer, are arranged alternately such that a signal layer is not sandwiched by the layers. Further, the multilayer module has a via, by which a corresponding signal layer, the potential layer, and the ground layer are electrically connected with each another and also with the top conductive layer L1. Further, the multilayer module has two layers of the potential layer and the ground layer, arranged alternately near the front surface, so that there is no signal layer therebetween, and a structure in which the via is not arranged in a local region for attaining the electrical effects of a solid surface. COPYRIGHT: (C)2005,JPO&NCIPI |
