Implements for simultaneously coating number of wafers during semiconductor manufacture by deposition from gas phase, i.e. chemical vapour deposition (CVD), or compressing chemical vapour deposition (LPCVD) as well as gas injector

摘要

Implement contains process chamber (Tp) with vertical jacket tube (TL) forming reaction chamber (R). In jacket tube is fitted holder (C) with stacked positions for horizontal holding of wafers (S1-n). Gas injector (I) supplies process gas into reaction chamber. Gas injector and/or opening region (O) in jacket tube extend vertically along holder and are so arranged that process gas stay, its flow velocity, pressure and/or other parameters are similarly adapted. Independent claims are included for gas injector and its manufacture.