| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element for suppressing the deterioration of a group III nitride semiconductor layer containing indium elements. <P>SOLUTION: In the nitride semiconductor element 1, a semiconductor area 5 consists of a first III-V compound semiconductor, and the layer of the first III-V compound semiconductor consists of a semiconductor containing at least the indium element, gallium elements, aluminum elements and nitride elements. The group III nitride semiconductor layer 7 is an active area and consists of a semiconductor containing the indium elements. The active area is provided between a group III nitride substrate 3 and a III-V compound semiconductor layer 5a. The III-V compound semiconductor layer consisting of a III-V compound semiconductor layer containing at least the indium element, gallium elements, aluminum elements, and nitride elements is deposited at a temperature lower than a depositing temperature of an AlGaN semiconductor. The semiconductor area 5 is provided on the active area 7, so that the group III nitride semiconductor layer of the active area 7 is not deteriorated during growing of the semiconductor area 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
