发明名称 THIN FILM TRANSISTOR, WIRING BOARD, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a thin film transistor that is capable of maintaining high characteristics even after exposure in the environment of high temperature and high humidity, and also provide a wiring board comprising the thin film transistor, a display device, and electronic equipment. SOLUTION: A thin film transistor comprises a source electrode 3 and a drain electrode 4, an organic semiconductor layer 5 which is provided in contact with the source electrode 3 and the drain electrode 4, a gate insulating layer 6 which is provided in contact with the organic semiconductor layer 5, and a gate electrode 7 which is insulated from the source electrode 3 and the drain electrode 4 via the gate insulating layer 6. At least one of the gate electrode 7, the source electrode 3, and the drain electrode 4 is comprised of a porous film that is mainly composed of a conductive material. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005223286(A) 申请公布日期 2005.08.18
申请号 JP20040032572 申请日期 2004.02.09
申请人 SEIKO EPSON CORP 发明人 KAWASE TAKEO;MORIYA SOICHI;HARADA MITSUAKI
分类号 H01L21/28;H01L21/288;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L29/78;H01L29/786;H01L51/00;H01L51/05;H01L51/10;H01L51/30;H01L51/40;(IPC1-7):H01L29/786 主分类号 H01L21/28
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