MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the reduction of the withstanding voltage of a semiconductor device formed with an electrode, etc., by etching its polysilicon film by isotropic dry etching. SOLUTION: A resist mask 3 is formed selectively on a polysilicon film 2 deposited on the surface of a semiconductor layer 1. While keeping the semiconductor layer 1 at a temperature not lower than 50°C and not higher than 100°C, such isotropic dry etching as chemical dry etching is so performed as to remove the exposed portion of the polysilicon film 2, and as to make the terminal of the polysilicon film 2 or its edge 7 being a step form an angle not smaller than 41°and not larger than 65°with respect to the surface of the semiconductor layer 1. COPYRIGHT: (C)2005,JPO&NCIPI