| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a copper wiring inhibiting the shortening of a lifetime due to an EM fault and an SM fault and having a high reliability. SOLUTION: The semiconductor device has a wiring layer composed of copper or a copper alloy containing oxygen and chlorine in a mean concentration of 1.0×10<SP>16</SP>to 2.0×10<SP>18</SP>atoms/cm<SP>3</SP>respectively. COPYRIGHT: (C)2005,JPO&NCIPI
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