发明名称
摘要 PROBLEM TO BE SOLVED: To obtain a photoelectric transducer device which can enhance an S/N ratio by a method wherein, out of control interconnections which are arranged and installed in the vertical or lateral direction with reference to a plurality of photoelectric transfer elements arranged two-dimensionally, the odd number control interconnections and the even number control interconnections are taken out to respective opposite sides. SOLUTION: A plurality of photoelectric transducer elements are arranged two-dimensional on a substrate. With reference to the photoelectric transducer element, control interconnections g1, g3, g5,... g1999 are arranged on the left side L, and control interconnections g2, g4, g6,... g2000 are arranged on the right side R. That is to say, the odd number control interconnections are formed at the left side L, and the even number control interconnections are formed at the right side R. The odd number control interconnections and the even number control interconnections are taken out respectively to opposite sides, and ten respective chips SRl-1 to SRl-10, SRl-11 to SRl-20 and IC1 to IC10, IC11 to IC20 are connected on the sides on which the control interconnections are taken out. As a result, the S/N ratio of the photoelectric transducer device can be enhanced.
申请公布号 JP3685446(B2) 申请公布日期 2005.08.17
申请号 JP20000099009 申请日期 2000.03.31
申请人 发明人
分类号 G01T1/20;H01L27/146;H01L21/84;H01L27/12;H01L27/14;H01L27/144;H01L31/04;H01L31/09;H01L31/10;H01L31/108;H04N5/32;H04N5/321;H04N5/335;H04N5/341;H04N5/357;H04N5/369;H04N5/374 主分类号 G01T1/20
代理机构 代理人
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