发明名称
摘要 PROBLEM TO BE SOLVED: To provide an SLD reducing the intensity modulation in output beam spectrum following after beam reflection due to the rapid change in equivalent refractive index caused in the boundary between a current implanted region and a not implanted region. SOLUTION: Within a super luminescent diode(SLD), a current implanted end (18) slowly reducing the current implanted amount is provided between a current implanted region (11) sectioned by a current implanting part (14) to an active layer (3) and not implanted region (13) for inserting a transfer region (12). In such a constitution, the current implanted end (18) for avoiding the rapid change in the equivalent refractive index of the waveguide by the active layer (3) is provided, thereby making feasible of reducing the intensity modulation of a spectrum by avoiding the reflection on this end (18).
申请公布号 JP3683416(B2) 申请公布日期 2005.08.17
申请号 JP19980235056 申请日期 1998.08.21
申请人 发明人
分类号 H01L33/06;H01L33/14;H01L33/30;H01L33/36 主分类号 H01L33/06
代理机构 代理人
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