FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING AT THE SAME,申请号KR20040008590-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING AT THE SAME
摘要
申请公布号	KR20050080543(A)	申请公布日期	2005.08.17
申请号	KR20040008590	申请日期	2004.02.10
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LEE, CHOONG HO;YOUN, JAE MAN;PARK, DONG GUN;LEE, CHUL
分类号	H01L21/28;H01L21/00;H01L21/336;H01L21/8234;H01L21/84;H01L27/08;H01L27/088;H01L27/092;H01L29/423;H01L29/49;H01L29/76;H01L29/78;H01L29/786;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L21/336	主分类号	H01L21/28
代理机构		代理人
主权项
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