| 摘要 |
PROBLEM TO BE SOLVED: To suppress slip growth and remarkably increase the yield of a silicon wafer in heat treatment by specifying such a wafer supporting range as to minimize decomposition shearing stress when the wafer is supported and is heat-treated. SOLUTION: When the silicon wafer 13 is heat-treated, the wafer is placed and supported on a plurality of supporting projections 12 which are of the same heights and are located on the same circle centering around the center 13a of the wafer and at such positions that divide the circle in equal parts, with each projection being located at 55 to 95% of the radius of the wafer from the center of the wafer. In an improved method of supporting the silicon wafer, there are three or four supporting projections, and each of the supporting projection is located at 83 to 88% of the radius of the wafer from the center of the wafer. COPYRIGHT: (C)2004,JPO |
