发明名称 |
Semiconductor wafer processing method and semiconductor wafers produced by the same |
摘要 |
A method of processing a semiconductor wafer sliced from a monocrystalline ingot comprises at least the steps of chamfering, lapping, etching, mirror-polishing, and cleaning. In the etching step, reaction-controlled acid etching is first performed and then diffusion-controlled acid etching is performed. The etching amount of the reaction-controlled acid etching is greater than the etching amount of the diffusion-controlled acid etching. The method can remove a mechanically formed damage layer, improve surface roughness, and efficiently decrease the depth of locally formed deep pits, while the flatness of the wafer attained through lapping is maintained, in order to produce a chemically etched wafer having a smooth and flat etched surface that hardly causes generation particles and contamination. <IMAGE>
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申请公布号 |
EP1564796(A1) |
申请公布日期 |
2005.08.17 |
申请号 |
EP20050010508 |
申请日期 |
1998.12.08 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
KUDO, HIDEO;KATO, TADAHIRO;NIHONMATSU, TAKASHI;MIYAZAKI, SEIICHI;YOSHIDA, MASAHIKO |
分类号 |
H01L21/302;H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
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