发明名称 |
SEMICONDUCTOR DEVICE CHANNEL TERMINATION |
摘要 |
A semiconductor device has a channel termination region for using a trench 30 filled with field oxide 32 and a channel stopper ring 18 which extends from the first major surface 8 through p-well 6 along the outer edge 36 of the trench 30, under the trench and extends passed the inner edge 34 of the trench. This asymmetric channel stopper ring provides an effective termination to the channel 10 which can extend as far as the trench 30. |
申请公布号 |
EP1563533(A1) |
申请公布日期 |
2005.08.17 |
申请号 |
EP20030758476 |
申请日期 |
2003.10.30 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
LOWIS, ROYCE |
分类号 |
H01L21/8234;H01L21/762;(IPC1-7):H01L21/762;H01L29/10 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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