Semiconductor device and formation method of trench in the semiconductor device,申请号KR20030029944-传众专利搜索

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发明名称	Semiconductor device and formation method of trench in the semiconductor device
摘要
申请公布号	KR100508862(B1)	申请公布日期	2005.08.17
申请号	KR20030029944	申请日期	2003.05.12
申请人		发明人
分类号	H01L21/76;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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