| 摘要 |
This invention provides an etching method for preventing deformation of an opening without extremely lowering productivity. This invention has a process for bonding a supporting board (5) on a front surface of a semiconductor substrate (1) to cover a pad electrode (3) formed on the semiconductor substrate (1) with a silicon oxide film (2) interposed therebetween, a process for forming a via hole from a back surface of the semiconductor substrate (1) to a surface of the pad electrode (3), a process for forming a first opening (8) in the semiconductor substrate (1) to a position where the silicon oxide film (2) is not exposed with using etching gas containing SF6 and O2 at least, and a process for forming a second opening (8) in the semiconductor substrate to a position where the silicon oxide film (2) is exposed with using etching gas containing C4F9 and SF6 at least, <IMAGE> |
