发明名称 IDDQ testing of CMOS mixed-signal integrated circuits
摘要 A method of enhancing the testability of CMOS ICs, in one or more of the following ways: by minimizing performance degradation of CMOS ICs under test; by eliminating the need for external voltage and current references; by inducing responsive effects; and by minimizing the amount of space used to integrate on-chip testing devices. The device is a CMOS IC comprising a fixed supply voltage, a negative power supply voltage, at least one pair of electrical nodes, and at least one fault-injector. The fault-injector is a transistor comprising a gate for operating in on-state and off-state conditions, and a source node and a drain node for completing an electrical path between a pair of electrical nodes. In an off-state condition, the fault-injector does not interfere with the normal operations of the circuit. However, in an on-state condition, it induces various responsive effects by varying the level of resistance.
申请公布号 US6930500(B2) 申请公布日期 2005.08.16
申请号 US20040858189 申请日期 2004.06.01
申请人 BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE 发明人 SRIVASTAVA ASHOK
分类号 G01R31/30;G01R31/3167;(IPC1-7):G01R31/02 主分类号 G01R31/30
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