发明名称 |
Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure |
摘要 |
A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of the layer of low k dielectric material with a plasma to form a layer of densified dielectric material over the remainder of the underlying layer of low k dielectric material, forming a second layer of low k dielectric material over the layer of densified dielectric material, and treating this second layer of low k dielectric material to form a second layer of densified dielectric material over the second layer of low k dielectric material. The layer or layers of densified dielectric material formed from the low k dielectric material provide mechanical support and can then function as etch stop and mask layers for the formation of vias and/or trenches.
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申请公布号 |
US6930056(B1) |
申请公布日期 |
2005.08.16 |
申请号 |
US20010884736 |
申请日期 |
2001.06.19 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
CATABAY WILBUR G.;HSIA WEI-JEN |
分类号 |
H01L21/3105;H01L21/311;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/3105 |
代理机构 |
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